Low temperature resistivity, thermoelectricity, and power factor of Nb doped anatase TiO2

Applied Physics Letters

Volumn 102, Issue 1, 2013, Pages

  Jacimovic J ^a   Gaal R ^a   Magrez, A ^a   Piatek, J ^a   Forro L ^a   Nakao, S ^b,c,d   Hirose, Y ^b,c,d   Hasegawa, T ^b,c,d  

^a EPFL   (Switzerland)

^b KANAGAWA ACADEMY OF SCIENCE AND TECHNOLOGY   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

^d JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANATASE TIO; CATION VACANCIES; DOPED-TIO; FIGURE OF MERITS; HIGH QUALITY; HIGH TEMPERATURE; KONDO SCATTERING; LOW TEMPERATURE RESISTIVITY; PEAK VALUES; POWER FACTORS; THERMOELECTRICS;

ELECTRIC POWER FACTOR; THERMAL CONDUCTIVITY;

TITANIUM DIOXIDE;

EID: 84872296458     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4773517     Document Type: Article

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