Electronic and optical properties of pure and doped boron-nitride nanotube

Physica B: Condensed Matter

Volumn 410, Issue 1, 2013, Pages 212-216

  Roknabadi, M R ^a   Ghodrati, M ^a   Modarresi, M ^a   Koohjani, F ^a  

^a FERDOWSI UNIVERSITY OF MASHHAD   (Iran)

Author keywords

Boron nitride; Nano tube; Tight binding

Indexed keywords

BORON NITRIDE NANOTUBES; C-DOPED; CARBON SUBSTITUTION; DOPING EFFECTS; HIGH ELECTRIC FIELDS; TIGHT BINDING; TIGHT BINDING MODEL; TRANSVERSE ELECTRIC FIELD;

ABSORPTION SPECTROSCOPY; BORON NITRIDE; CARBON; ELECTRIC FIELDS; ENERGY GAP; MAGNETIC FLUX; NITRIDES; OPTICAL PROPERTIES; SEMICONDUCTOR DOPING;

NANOTUBES;

EID: 84872284762     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2012.10.033     Document Type: Article

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