Enhancement of thermoelectric figure-of-merit at low temperatures by titanium substitution for hafnium in n-type half-Heuslers Hf0.75-xTixZr0.25NiSn0.99Sb0.01

Nano Energy

Volumn 2, Issue 1, 2013, Pages 82-87

  Joshi, Giri ^a   Dahal, Tulashi ^a   Chen, Shuo ^a   Wang, Hengzhi ^a   Shiomi, Junichiro ^b   Chen, Gang ^c   Ren, Zhifeng ^a  

^a BOSTON COLLEGE   (United States)

^b UNIVERSITY OF TOKYO   (Japan)

^c Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

Half Heuslers; Nanostructuring process; Thermoelectrics

Indexed keywords

ARC-MELTING; HALF-HEUSLERS; LOW TEMPERATURES; NANO-STRUCTURING; TEMPERATURE APPLICATIONS; THERMOELECTRIC PROPERTIES; THERMOELECTRICS;

BALL MILLING; HOT PRESSING; THERMAL CONDUCTIVITY; THERMOELECTRIC EQUIPMENT; TITANIUM; ZIRCONIUM;

HAFNIUM;

EID: 84872264971     PISSN: 22112855     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nanoen.2012.07.020     Document Type: Article

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