Characterization of atomic layer deposition HfO2, Al 2O3, and plasma-enhanced chemical vapor deposition Si 3N4 as metal-insulator-metal capacitor dielectric for GaAs HBT technology

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 31, Issue 1, 2013, Pages

  Yota, Jiro ^a   Shen, Hong ^a   Ramanathan, Ravi ^a  

^a SKYWORKS SOLUTIONS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM OXIDES; APPLIED VOLTAGES; CAPACITANCE DENSITY; CAPACITOR DIELECTRICS; ELECTRICAL CHARACTERISTIC; GAAS; GAAS HBT; GAAS HETEROJUNCTION BIPOLAR TRANSISTORS; HAFNIUM DIOXIDE; HAFNIUM DIOXIDE FILM; HIGH DENSITY; METAL INSULATOR METAL CAPACITOR (MIM); METAL INSULATORS; MIM CAPACITORS;

ALUMINUM; ATOMIC LAYER DEPOSITION; CAPACITANCE; CAPACITORS; ELECTRIC BREAKDOWN; ELECTRIC INSULATORS; GALLIUM ARSENIDE; HAFNIUM OXIDES; HETEROJUNCTION BIPOLAR TRANSISTORS; OXIDES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM; SILICON; SILICON NITRIDE; VAPORS;

MIM DEVICES;

EID: 84871912012     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.4769207     Document Type: Article

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