SCOPUS 정보 검색 플랫폼

AIP Advances

Volumn 2, Issue 4, 2012, Pages

Thermal electric effects in Fe|GaAs|Fe tunnel junctions

(2) Jia, Xintao a,b Xia, Ke a

a BEIJING NORMAL UNIVERSITY (China)

b HENAN POLYTECHNIC UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ARSENIDE; III-V SEMICONDUCTORS; SEMICONDUCTING GALLIUM;

ENERGY FLOW; INTERFACIAL DEFECT; LANDAUER; SPIN-POLARIZED; THERMALLY INDUCED;

TUNNEL JUNCTIONS;

EID: 84871901070 PISSN: None EISSN: 21583226 Source Type: Journal
DOI: 10.1063/1.4773464 Document Type: Article

Times cited : (7)

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