Corrugated flat band as an origin of large thermopower in hole doped PtSb2

AIP Advances

Volumn 2, Issue 4, 2012, Pages

  Mori, Kouta ^a,b   Usui, Hidetomo ^a,b   Sakakibara, Hirofumi ^a   Kuroki, Kazuhiko ^a,b  

^a UNIVERSITY OF ELECTRO COMMUNICATIONS   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY COMPOUNDS; CALCULATIONS; SEEBECK COEFFICIENT; SEMICONDUCTOR DOPING; THERMOELECTRIC POWER;

BAND CALCULATION; BAND DISPERSIONS; BRILLOUIN ZONES; FIRST PRINCIPLES; FLAT BAND; THERMOELECTRIC PROPERTIES;

PLATINUM COMPOUNDS;

EID: 84871889069     PISSN: None     EISSN: 21583226     Source Type: Journal    
DOI: 10.1063/1.4759007     Document Type: Article

References (16)

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16. Here we omit the calculation result for the non-doped case. This is because the Seebeck coefficient for δ = 0 is very sensitive to the band gap, which cannot be estimated with enough accuracy in DFT calculations, especially when the gap is small.