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Physical Review Letters

Volumn 110, Issue 1, 2013, Pages

Gas doping on the topological insulator Bi2Se3 surface

(3) Koleini, Mohammad a Frauenheim, Thomas a Yan, Binghai a

a UNIVERSITY OF BREMEN (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE APPLICATION; DISSOCIATION PROCESS; EXPERIMENTAL STRATEGY; FIRST-PRINCIPLES CALCULATION; GAS DOPING; GAS MOLECULES; TOPOLOGICAL INSULATORS; VACANCY SITES;

CALCULATIONS; DISSOCIATION; ELECTRIC INSULATORS; EXPERIMENTS; NITROGEN OXIDES; PASSIVATION; SURFACES; VACANCIES;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 84871815309 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.110.016403 Document Type: Article

Times cited : (37)

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