Characterization and modeling of an sige hbt technology for transceiver applications in the 100-300-GHz range

IEEE Transactions on Microwave Theory and Techniques

Volumn 60, Issue 12, 2012, Pages 4024-4034

  Voinigescu, Sorin P ^a   Dacquay, Eric ^a   Adinolfi, Valerio ^a   Sarkas, Ioannis ^a   Balteanu, Andreea ^a   Tomkins, Alexander ^a,b   Celi, Didier ^c   Chevalier, Pascal ^c  

^a UNIVERSITY OF TORONTO   (Canada)

^b Peraso Technologies Inc   (Canada)

^c STMICROELECTRONICS   (France)

Author keywords

Amplifier; D band; device modeling; divider; G band; H band; heterojunction bipolar transistors (HBTs); HICUM; prescaler; silicon germanium (SiGe); voltage controlled oscillator (VCO)

Indexed keywords

D-BAND; DEVICE MODELING; DIVIDER; G-BAND; H-BAND; HICUM; PRESCALERS; SILICON GERMANIUM;

AMPLIFIERS (ELECTRONIC); OSCILLISTORS; SCATTERING PARAMETERS; VARIABLE FREQUENCY OSCILLATORS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 84871810025     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2012.2224368     Document Type: Article

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