Impact of fluorine admixture, hydrogen loading, and exposure to ArF excimer laser on photoluminescence of bismuth defects in amorphous silica

Journal of Non-Crystalline Solids

Volumn 362, Issue 1, 2013, Pages 180-184

  Trukhin, Anatoly ^a   Teteris, Janis ^a   Bazakutsa, Aleksey ^b   Golant, Konstantin ^b  

^a UNIVERSITY OF LATVIA   (Latvia)

^b INSTITUTE OF RADIO ENGINEERING AND ELECTRONICS   (Russian Federation)

Author keywords

Fluorine; Hydrogen; Oxygen influence; SiO2 Bi

Indexed keywords

AMORPHOUS SILICA; ARF EXCIMER LASER; BAND INTENSITY; BISMUTH-DOPED; COLLISIONAL DEACTIVATION; EFFECT OF HYDROGEN; ELECTRON-HOLE RECOMBINATION; FLUORINE-FREE; HOST MATERIALS; HYDROGEN LOADINGS; INTERSTITIAL HYDROGEN; NEAR INFRARED; OXYGEN INFLUENCE; PL BANDS; SILICA NETWORKS; SILICA SUBSTRATE; UV IRRADIATION;

BISMUTH; CHEMICAL VAPOR DEPOSITION; EXCIMER LASERS; FLUORINE; HYDROGEN; HYDROGEN STORAGE; INFRARED DEVICES; MOLECULES; OXYGEN; PHOTOLUMINESCENCE; PLASMA CVD; SILICA;

LOADING;

EID: 84871773089     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2012.11.027     Document Type: Article

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