Nanoscale radiative heat flow due to surface plasmons in graphene and doped silicon

Physical Review Letters

Volumn 109, Issue 26, 2012, Pages

  Van Zwol, P J ^a   Thiele, S ^a   Berger, C ^a   De Heer, W A ^b   Chevrier, J ^a  

^a CNRS   (France)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC SUBSTRATES; DOPED SILICON; ENERGY CONVERSION DEVICES; EPITAXIALLY GROWN; INFRARED RANGE; NANO SCALE; NEAR FIELDS; PHONON-POLARITON; RADIATIVE HEAT; RADIATIVE HEAT EXCHANGE; RADIATIVE HEAT TRANSFER; SURFACE PLASMONS; TEMPERATURE DEPENDENT; WAVE VECTOR;

ELECTRONIC STRUCTURE; ENERGY CONVERSION; HEAT FLUX; NANOTECHNOLOGY; PHONONS; PLASMONS; RADIATIVE TRANSFER; SILICON; SILICON CARBIDE; SILICON OXIDES;

GRAPHENE;

EID: 84871759260     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.109.264301     Document Type: Article

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