Effect of reduced Cu(InGa)(SeS)2 thickness using three-step H2Se/Ar/H2S reaction of Cu-In-Ga metal precursor

IEEE Journal of Photovoltaics

Volumn 3, Issue 1, 2013, Pages 446-450

  Kim, Kihwan ^a   Park, Hyeonwook ^b   Kim, Woo Kyoung ^b   Hanket, Gregory M ^a   Shafarman, William N ^a  

^a UNIVERSITY OF DELAWARE   (United States)

^b Yeungnam University   (South Korea)

Author keywords

Diode; energy conversion; inorganic compound; photovoltaic cells; thin film devices

Indexed keywords

ABSORBER LAYERS; ABSORBER THICKNESS; AR COATINGS; CU(IN ,GA)(SE ,S)2; FILL FACTOR; GRAIN SIZE; MATERIAL CHARACTERIZATIONS; METAL PRECURSOR; NONUNIFORMITY; SELENIZATION;

DIODES; ENERGY CONVERSION; INORGANIC COMPOUNDS; INTERFACES (MATERIALS); PHOTOVOLTAIC CELLS; SEMICONDUCTING SELENIUM COMPOUNDS; THIN FILM DEVICES;

GALLIUM;

EID: 84871752720     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2012.2219501     Document Type: Article

References (11)

1. K. Kim, G. M. Hanket, T. Huynh, and W. N. Shafarman, "Three-step H2 Se/Ar/H2 S reaction of Cu-In-Ga precursors for controlled composition and adhesion of Cu(In, Ga)(Se, S)2 thin films," J. Appl. Phys., vol. 111, p. 083710, 2012.
2. O. Lundberg, M. Bodegard, J. Malmstr̈om, and L. Stolt, "Influence of the Cu(In, Ga)Se2 thickness and Ga grading on solar cell performance," Progress Photovoltaics: Res. Appl., vol. 11, pp. 77-88, 2003.
3. W. N. Shafarman, R. S. Huang, and S. H. Stephens, "Characterization of Cu(InGa)Se2 solar cells using etched absorber layers," in Conf. Rec. IEEE 4th World Conf. Photovoltaic Energy Conversion, 2006, pp. 420-423.
4. T. Schlenker, V. Laptev, H. W. Schock, and J. H. Werner, "Substrate influence on Cu(In, Ga)Se2 film texture," Thin Solid Films, vol. 480-481, pp. 29-32, 2005. (Pubitemid 40642945)
5. K. H. Kim, K. H. Yoon, J. H. Yun, and B. T. Ahn, "Effects of se flux on the microstructure of Cu(In, Ga)Se2 thin film deposited by a three-stage co-evaporation process," Electrochem. Solid-State Lett., vol. 9, pp. A382-A385, 2006. (Pubitemid 43941616)
6. J. Jaffe and A. Zunger, "Defect-induced nonpolar-to-polar transition at the surface of chalcopyrite semiconductors," Phys. Rev. B, vol. 64, p. 241304, 2001.
7. M. A. Contreras, B. Egaas, P. Dippo, J. Webb, J. Granata, K. Ramanathan, S. Asher, A. Swartzlander, and R. Noufi, "On the role of Na and modifications to Cu(In, Ga)Se2 absorber materials using thin-MF (M = Na, K, Cs) precursor layers," in Proc. 26th IEEE Photovoltaic Spec. Conf., 1997, pp. 359-362.
8. W. N. Shafarman, S. Siebentritt, and L. Stolt, in Handbook of Photovoltaic Science and Engineering, A. Luque and S. Hegedus, Eds., 2nd ed. New York: Wiley, 2011, pp. 546-599.
9. J. Palm, V. Probst, W. Stetter, R. Toelle, S. Visbeck, H. Calwer, T. Niesen, H. Vogt, O. Herńandez, M. Wendl, and F. H. Karg, "CIGSSe thin film PV modules: from fundamental investigations to advanced performance and stability," Thin Solid Films, vol. 451-452, pp. 544-551, 2004.
10. M. B̈ar, S. Nishiwaki, L. Weinhardt, S. Pookpanratana, W. N. Shafarman, and C. Heske, "Electronic level alignment at the deeply buried absorber/Mo interface in chalcopyrite-based thin film solar cells," Appl. Phys. Lett., vol. 93, p. 042110, 2008.
11. G. Smestad and H. Ries, "Luminescence and current-voltage characteristics of solar cells and optoelectronic devices," Solar Energy Mater. Solar Cells, vol. 25, pp. 51-71, 1992.