Anisotropy of effective masses in CuInSe2

Applied Physics Letters

Volumn 101, Issue 26, 2012, Pages

  Yakushev, M V ^a   Luckert, F ^a   Rodina, A V ^b   Faugeras, C ^c   Karotki, A V ^d   Mudryi, A V ^d   Martin, R W ^a  

^a UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^b IOFFE INSTITUTE   (Russian Federation)

^c GRENOBLE HIGH MAGNETIC FIELD LABORATORY   (France)

^d INSTITUTE OF SOLID STATE AND SEMICONDUCTOR PHYSICS   (Belarus)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORBER LAYERS; APPLIED MAGNETIC FIELDS; DIAMAGNETIC SHIFTS; EFFECTIVE MASS; FREE EXCITONS; G FACTORS; PERTURBATION MODEL; THIN FILM SOLAR CELL TECHNOLOGY;

COPPER COMPOUNDS; FILM GROWTH;

ANISOTROPY;

EID: 84871732462     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4773480     Document Type: Article

References (28)

1. P. Jackson, D. Hariskos, E. Lotter, S. Paetel, R. Wuerz, R. Menner, W. Wischmann, and M. Powalla, Prog. Photovoltaics 19, 894 (2011). 10.1002/pip.1078
2. C. F. Klingshirn, Semiconductor Optics (Springer-Verlag, 1995).
3. R. G. Wheeler and J. O. Dimmock, Phys. Rev. 125, 1805 (1962). 10.1103/PhysRev.125.1805
4. S. Taguchi, T. Gota, M. Takeda, and G. Kido, Phys. Soc. Jpn. 57, 3256 (1988). 10.1143/JPSJ.57.3256
5. J. L. Shay and J. H. Wernick, Ternary Chalcopyrite Semiconductors-Growth, Electronic Properties, and Applications (Pergamon, 1975).
6. S. Chatraphorn, K. Yoodee, P. Songpongs, C. Chityuttakan, K. Sayavong, S. Wongmanerod, and P. O. Holtz, Jpn. J. Appl. Phys., Part 2 37, L269 (1998). 10.1143/JJAP.37.L269
7. F. Luckert, M. V. Yakushev, C. Faugeras, A. V. Karotki, A. V. Mudryi, and R. W. Martin, J. Appl. Phys. 111, 093507 (2012). 10.1063/1.4709448
8. M. V. Yakushev, F. Luckert, C. Faugeras, A. V. Karotki, A. V. Mudryi, and R. W. Martin, Appl. Phys. Lett. 97, 152110 (2010). 10.1063/1.3502603
9. A. V. Rodina, M. Dietrich, A. Goldner, L. Eckey, A. Hoffmann, Al. L. Efros, M. Rosen, and B. K. Meyer, Phys. Rev. B 64, 115204 (2001). 10.1103/PhysRevB.64.115204
10. C. Persson, Appl. Phys. Lett. 93, 072106 (2008). 10.1063/1.2969467
11. B. Gil, D. Felbacq, and S. F. Chichibu, Phys. Rev. B 85, 075205 (2012). 10.1103/PhysRevB.85.075205
12. T. Irie, S. Endo, and S. Kimura, Jpn. J. Appi. Phys., Part 1 18, 1303 (1979). 10.1143/JJAP.18.1303
13. S. M. Wasim, G. Marcano, and G. S. Porras, Jpn. J. Appl. Phys., Suppl. 19 (3), 133 (1980). 10.1143/JJAP.19.L133
14. R. D. Tomlinson, Sol. Cells 16, 17 (1986). 10.1016/0379-6787(86)90072-4
15. R. P. Seisyan and B. P. Zakharchenya, Landau Level Spectroscopy (North-Holland, 1991).
16. H. Weinert, H. Neumann, H. J. Hobler, G. Kuhn, and N. V. Nam, Phys. Status Solidi B 81, K59 (1977). 10.1002/pssb.2220810161
17. G. Riede, G. Subotta, H. Neumann, and X. N. Hoang, Solid State Commun. 28, 449 (1978). 10.1016/0038-1098(78)90836-0
18. P. W. Li, A. R. Anderson, and R. H. Plovnick, J. Phys. Chem. Solids 40, 333 (1979). 10.1016/0022-3697(79)90113-6
19. E. Arushanov, L. Essaleh, J. Galibert, J. Leotin, M. A. Arsene, J. P. Peyrade, and S. Askenazy, Appl. Phys. Lett. 61, 958 (1992). 10.1063/1.107741
20. S. M. Wasim, L. Essaleh, C. Rincoón, G. Marín, J. Galibert, and J. Leotin, J. Phys. Chem. Solids 66, 1887 (2005). 10.1016/j.jpcs.2005.09. 023
21. W. S. Baer, Phys. Rev. B 154, 785 (1967). 10.1103/PhysRev.154.785
22. H. Tanino, T. Maeda, H. Fujikake, H. Nakanishi, S. Endo, and T. Trie, Phys. Rev. B 45, 13323 (1992). 10.1103/PhysRevB.45.13323
23. H. Neumann, H. Subotta, W. Kissinger, V. Riede, and G. Kuhn, Phys. Status Solidi B 108, 483 (1981). 10.1002/pssb.2221080224
24. B. Lax and J. G. Mavroides, Phys. Rev. 100, 1650 (1955). 10.1103/PhysRev.100.1650
25. G. L. Bir and G. E. Pikus, Symmetry and Strain Induced Effects in Semiconductors (Wiley, 1974).
26. M. V. Yakushev, R. W. Martin, A. Babinski, and A. V. Mudryi, Phys. Status Solidi C 6, 1086 (2009). 10.1002/pssc.200881149
27. M. V. Yakushev, R. W. Martin, and A. V. Mudryi, Appl. Phys. Lett. 94, 042109 (2009). 10.1063/1.3077022
28. F. Luckert, M. V. Yakushev, C. Faugeras, A. V. Karotki, A. V. Mudryi, and R. W. Martin, Appl. Phys. Lett. 97, 162101 (2010). 10.1063/1.3502608