Simulation and process flow of radiation sensors based on chalcogenide glasses for in situ measurement capability

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 9, Issue 12, 2012, Pages 2415-2419

  Ailavajhala, Mahesh ^a   Mitkova, Maria ^a   Butt, Darryl P ^a  

^a Boise State University   (United States)

Author keywords

Chalcogenide glasses; Gamma radiation; Radiation sensing; Silver diffusion

Indexed keywords

AG DOPING; CHALCOGENIDE GLASS; CLOSE PROXIMITY; DEVICE FABRICATIONS; DEVICE PERFORMANCE; DEVICE STRUCTURES; E-FIELD; ELECTRONIC DEVICE; IN-DEPTH INVESTIGATION; IN-SITU MEASUREMENT; INERT ELECTRODES; MULTI-PHYSICS; PLANAR STRUCTURE; PROCESS FLOWS; RADIATION SENSORS; RADIATION-INDUCED; RADIATION-SENSING; SILVER DIFFUSION; THICKNESS OF THE FILM;

ELECTRIC FIELDS; ELECTRODES; ELECTRON DEVICES; GAMMA RAYS; GLASS; SEMICONDUCTOR DOPING; X RAY SPECTROSCOPY;

SILVER;

EID: 84871397243     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201200197     Document Type: Article

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