The effect of different oxidative growth conditions on the scintillation properties of Ce: Gd3Al3Ga2O12 crystal

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 9, Issue 12, 2012, Pages 2251-2254

  Suzuki, Akira ^a   Kurosawa, Shunsuke ^a   Pejchal, Jan ^a,c   Babin, Vladimir ^c   Fujimoto, Yutaka ^a   Yamaji, Akihiro ^a   Seki, Mafuyu ^a   Futami, Yoshisuke ^a   Yokota, Yuui ^a   Yubuta, Kunio ^a   Shishido, Toetsu ^a   Kikuchi, Masae ^a   Nikl, Martin ^c   Yoshikawa, Akira ^a,b  

^a TOHOKU UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c INSTITUTE OF PHYSICS   (Czech Republic)

Author keywords

GAGG; Oxygen vacancy; Scintillation decay; Slow decay component

Indexed keywords

DECAY COMPONENTS; EMISSION WAVELENGTH; FLOATING ZONE METHOD; FORBIDDEN GAPS; GAGG; GROWTH ATMOSPHERE; GROWTH CONDITIONS; GROWTH PROCESS; LIGHT YIELD; OXYGEN CONCENTRATIONS; OXYGEN CONTENT; OXYGEN DEFECT; RADIATIVE RECOMBINATION PROCESS; SCINTILLATION DECAY; SCINTILLATION MECHANISMS; SCINTILLATION PERFORMANCE; SCINTILLATION PROPERTIES; SHALLOW TRAPS; TRAPPING EFFECTS;

DEFECTS; GADOLINIUM; GALLIUM; GROWTH (MATERIALS); OXYGEN; OXYGEN VACANCIES; SINGLE CRYSTALS;

SCINTILLATION;

EID: 84871377047     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201200327     Document Type: Article

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