A K-band 5W doherty amplifier MMIC utilizing 0.15μm GaN on SiC HEMT technology

Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

Volumn , Issue , 2012, Pages

  Campbell, Charles F ^a   Tran, Kim ^a   Kao, Ming Yih ^a   Nayak, Sabyasachi ^a  

^a TRIQUINT SEMICONDUCTOR   (United States)

Author keywords

Doherty amplifier; Gallium Nitride; MMIC; power amplifier

Indexed keywords

BACKOFFS; CONTINUOUS WAVE; FIELD PLATES; GAIN COMPRESSION; INPUT POWER; PEAK EFFICIENCY; POWER-ADDED EFFICIENCY; PROCESS TECHNOLOGIES; SATURATED OUTPUT POWER;

DOHERTY AMPLIFIERS; EFFICIENCY; GALLIUM NITRIDE; INTEGRATED CIRCUITS; POWER AMPLIFIERS; SILICON CARBIDE;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 84871106218     PISSN: 15508781     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CSICS.2012.6340057     Document Type: Conference Paper

References (5)

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4. D. Kimball, et al., "Modeling and Design of RF Amplifiers for Envelope Tracking WCDMA Base-Station Applications", IEEE Compound Semiconductor Integr. Circuit Symp., Oct. 2008.
5. R. A. Branson, et. al., "Digital Pre-distortion for Improving Efficiency, Linearity and Average Output Power of Microwave Point-to-Point Power Amplifiers used in Cellular Backhaul Telecommunication Systems", IEEE MTT-S Int. Microwave Symp. Dig., 2012, pp. 1-4.