One-dimensional quantum confinement effect modulated thermoelectric properties in InAs nanowires

Nano Letters

Volumn 12, Issue 12, 2012, Pages 6492-6497

  Tian, Yuan ^a,b   Sakr, Mohammed R ^a,c   Kinder, Jesse M ^a   Liang, Dong ^a   MacDonald, Michael J ^a   Qiu, Richard L J ^a   Gao, Hong Jun ^b   Gao, Xuan P A ^a  

^a CASE WESTERN RESERVE UNIVERSITY   (United States)

^b INSTITUTE OF PHYSICS   (China)

^c Alexandria University Faculty Of Science   (Egypt)

Author keywords

indium arsenide; nanowire; one dimensional; quantum confinement; Thermopower

Indexed keywords

DIFFUSIVE TRANSPORT REGIME; ELECTRICAL CONDUCTANCE; GATE VOLTAGES; INAS; INDUCED ENERGY; LOW TEMPERATURES; NANO-STRUCTURED; POWER FACTORS; QUANTUM CONFINEMENT EFFECTS; QUASI-ONE-DIMENSIONAL; SEMICONDUCTOR NANOWIRE; SUBBANDS; THERMOELECTRIC POWER FACTORS; THERMOELECTRIC PROPERTIES; THERMOELECTRICS; THERMOPOWER MEASUREMENTS;

CHEMICAL VAPOR DEPOSITION; ELECTRIC POWER FACTOR; INDIUM ARSENIDE; NANOWIRES; QUANTUM CONFINEMENT; THERMOELECTRIC EQUIPMENT;

THERMOELECTRIC POWER;

EID: 84870939997     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl304194c     Document Type: Article

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