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Volumn 112, Issue 9, 2012, Pages

Dielectric relaxation study of amorphous TiTaO thin films in a large operating temperature range

(10) Rouahi, A a,b Kahouli, A a,b Challali, F c Besland, M P d Vallee C e Pairis, S f Yangui, B b Salimy, S d Goullet, A d Sylvestre, A a

a LABORATOIRE D ELECTROTECHNIQUE DE GRENOBLE (France)

b FACULTÉ DES SCIENCES DE TUNIS (Tunisia)

c UNIVERSITÉ PARIS 13 (France)

d UNIVERSITÉ DE NANTES (France)

e Joseph Fourier University (France)

f CNRS (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANGLE-RESOLVED X-RAY PHOTOELECTRON SPECTROSCOPY; COMPLEX DEFECTS; DISPERSION PHENOMENA; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; HIGH TEMPERATURE; LOW TEMPERATURES; OPERATING TEMPERATURE; REACTIVE MAGNETRON SPUTTERING; REDUCTION OF TI; TIO;

ACTIVATION ENERGY; FIELD EMISSION MICROSCOPES; IONIZATION; OXYGEN VACANCIES; PHOTOELECTRONS; RELAXATION PROCESSES; TANTALUM OXIDES; TEMPERATURE; TITANIUM DIOXIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

THIN FILMS;

EID: 84870884888 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.4761980 Document Type: Article

Times cited : (5)

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