Optical and structural properties of SiOx films grown by molecular beam deposition: Effect of the Si concentration and annealing temperature

Journal of Applied Physics

Volumn 112, Issue 9, 2012, Pages

  Nikitin, Timur ^a   Velagapudi, Rama ^b   Sainio, Jani ^b   Lahtinen, Jouko ^b   Räsänen, Markku ^a   Novikov, Sergei ^b   Khriachtchev, Leonid ^a  

^a UNIVERSITY OF HELSINKI   (Finland)

^b AALTO UNIVERSITY   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION COEFFICIENTS; ANNEALING TEMPERATURES; CHEMICAL COMPOSITIONS; EFFECTIVE MEDIUM APPROXIMATION; LASER INDUCED; LASER LIGHTS; MOLECULAR BEAM DEPOSITION; NANO SCALE; PHOTOLUMINESCENCE INTENSITIES; PL QUANTUM YIELD; RAMAN BANDS; RAMAN SIGNAL; SI CONCENTRATION; SI CONTENT; SI NANOCRYSTAL; SI-RICH SILICON OXIDES; SILICA SUBSTRATE; ULTRA-SMALL;

ANNEALING; CHEMICAL MODIFICATION; LASERS; MOLECULAR BEAMS; NANOCRYSTALS; PHASE SEPARATION; PHOTOELECTRONS; QUANTUM YIELD; RAMAN SPECTROSCOPY; REFRACTIVE INDEX; SILICA; SILICON OXIDES; X RAY PHOTOELECTRON SPECTROSCOPY;

SILICON;

EID: 84870859455     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4764893     Document Type: Article

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