A study of SiGe signal sources in the 220-330 GHz range

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 2012, Pages

  Tomkins, A ^a   Dacquay, E ^a   Chevalier, P ^b   Hasch, J ^c   Chantre, A ^b   Sautreuil, B ^b   Voinigescu, S P ^a  

^a UNIVERSITY OF TORONTO   (Canada)

^b STMICROELECTRONICS   (France)

^c ROBERT BOSCH GMBH   (Germany)

Author keywords

doubler; push push VCO; SiliconGermanium heterojunction bipolar transistors; THz circuits; voltage controlled oscillator

Indexed keywords

COLPITTS VCO; DOUBLERS; FUNDAMENTAL FREQUENCIES; LOW-NOISE SIGNALS; OUTPUT POWER; POWER COMBINING; PUSH-PUSH; PUSH-PUSH VCO; SIGE HBTS; SIGNAL SOURCE; SILICON GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTORS; SUBMILLIMETERS; TUNING RANGES; VOLTAGE-CONTROLLED-OSCILLATOR; WAVE FREQUENCIES;

EFFICIENCY; ELECTRIC NETWORK TOPOLOGY; HETEROJUNCTION BIPOLAR TRANSISTORS; OSCILLISTORS; SILICON ALLOYS; SPACECRAFT POWER SUPPLIES;

VARIABLE FREQUENCY OSCILLATORS;

EID: 84870666748     PISSN: 10889299     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/BCTM.2012.6352642     Document Type: Conference Paper

References (8)

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