Tailoring of molecular planarity to reduce charge injection barrier for high-performance small-molecule-based ternary memory device with low threshold voltage

Advanced Materials

Volumn 24, Issue 46, 2012, Pages 6210-6215

  Miao, Shifeng ^a   Li, Hua ^a   Xu, Qingfeng ^a   Li, Youyong ^a   Ji, Shunjun ^a   Li, Najun ^a   Wang, Lihua ^a   Zheng, Junwei ^a   Lu, Jianmei ^a  

^a SOOCHOW UNIVERSITY   (China)

Author keywords

memory; planarity; small molecule; ternary; threshold voltage

Indexed keywords

CHARGE INJECTION BARRIERS; CRYSTALLINITIES; FLUORENONES; LOW THRESHOLD VOLTAGE; LOW-POWER CONSUMPTION; MOLECULAR PLANARITY; NANOELECTRONIC DEVICES; PLANARITY; POTENTIAL APPLICATIONS; SMALL MOLECULES; TERNARY; TERNARY MEMORY;

DATA STORAGE EQUIPMENT; KETONES; THRESHOLD VOLTAGE;

MOLECULES;

AZO COMPOUND; INDIUM TIN OXIDE; KETONE; TIN DERIVATIVE;

ARTICLE; CHEMISTRY; ELECTRONICS; NANOTECHNOLOGY; QUANTUM THEORY;

AZO COMPOUNDS; ELECTRONICS; KETONES; NANOTECHNOLOGY; QUANTUM THEORY; TIN COMPOUNDS;

EID: 84870541840     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.201202319     Document Type: Article

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