Transfer of GaN LEDs from sapphire to flexible substrates by laser lift-off and contact printing

IEEE Photonics Technology Letters

Volumn 24, Issue 23, 2012, Pages 2115-2118

  Chun, Jaeyi ^a   Hwang, Youngkyu ^a   Choi, Yong Seok ^a   Jeong, Tak ^b   Baek, Jong Hyeob ^b   Ko, Heung Cho ^a   Park, Seong Ju ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Korea Photonics Technology Institute (KOPTI)   (South Korea)

Author keywords

Flexible light emitting diode (LED); GaN; laser lift off (LLO); transfer printing

Indexed keywords

CONTACT PRINTING; FLEXIBLE SUBSTRATE; GAN; GAN LEDS; GAN-BASED LIGHT-EMITTING DIODES; LASER LIFT-OFF; LED ARRAYS; PEDESTAL STRUCTURE; STABLE PLATFORM; TRANSFER PRINTING; TRANSFER YIELDS;

GALLIUM NITRIDE; LASERS; POLYETHYLENE TEREPHTHALATES; PRINTING; SAPPHIRE; SILICON; SILICON WAFERS; SUBSTRATES;

LIGHT EMITTING DIODES;

EID: 84870456982     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2012.2221694     Document Type: Article

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