Silicon solar cell with integrated tunnel junction for multijunction photovoltaic applications

IEEE Electron Device Letters

Volumn 33, Issue 12, 2012, Pages 1732-1734

  Yang, Jingfeng ^a   Goguen, Jared ^a   Kleiman, Rafael ^a  

^a MCMASTER UNIVERSITY   (Canada)

Author keywords

Multijunction (MJ) solar cell; photovoltaic; silicon (Si); tunnel junction (TJ)

Indexed keywords

BOTTOM CELLS; ELECTRICAL PERFORMANCE; ILLUMINATION LEVELS; MULTIJUNCTION; NORMAL OPERATIONS; PHOTOVOLTAIC; PHOTOVOLTAIC APPLICATIONS; PHOTOVOLTAIC CHARACTERISTICS; RAPID THERMAL DIFFUSION; SI SOLAR CELLS; SI-BASED; SOLAR CELL STRUCTURES; SOLAR-CELL APPLICATIONS;

SILICON; TUNNEL JUNCTIONS;

SILICON SOLAR CELLS;

EID: 84870418526     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2217391     Document Type: Article

References (11)

1. J. F. Yang, D. Cheong, J. Rideout, S. Tavakoli, and R. Kleiman, "Siliconbased multi-junction solar cell with 19.7% efficiency at 1-sun using areal current matching for 2-terminal operation," in Proc. 37th IEEE Photovoltaic Spec. Conf., 2011, pp. 001019-001024.
2. M. Umeno, T. Soga, K. Baskar, and T. Jimbo, "Heteroepitaxial technologies on Si for high-efficiency solar cells," Solar Energy Mater. Solar Cells, vol. 50, no. 1-4, pp. 203-212, Jan. 1998. (Pubitemid 128387610)
3. J. F. Geisz, J. M. Olson, D. J. Friedman, K. M. Jones, R. C. Reedy, and M. J. Romero, "Lattice-matched GaNPAs-on-silicon tandem solar cells," in Proc. 31st IEEE Photovoltaic Spec. Conf., 2005, pp. 695-698. (Pubitemid 41667879)
4. L. A. Reichertz, I. Gherasoiu, K. M. Yu, V. M. Kao, W. Walukiewicz, and J. W. Ager, "Demonstration of a III-Nitride/Silicon tandem solar cell," Appl. Phys. Exp., vol. 2, no. 12, pp. 122 202-1-122 202-3, Dec. 2009.
5. M. Carmody, S. Mallick, J. Margetis, R. Kodama, T. Biegala, D. Xu, P. Bechmann,W. Garland, and S. Sivananthan, "Single-crystal II-VI on Si single-junction and tandem solar cells," Appl. Phys. Lett., vol. 96, no. 15, pp. 153 502-1-153 502-3, Apr. 2010.
6. K. Dreyer, E. Fehrenbacher, E. Oliva, A. Leimenstoll, F. Schätzle, M. Hermle, A. Bett, and F. Dimroth, "GaInP/GaAs/Si Triple-Junction Solar Cell Formed by Wafer Bonding," in Proc. Vorträge der DPG-Tagung Dresden, 2011, p. AKE 11.3.
7. E. Garcia-Tabares, I. Garcia, D. Martin, and I. Rey-Stolle, "Optimizing bottom subcells for III-V-on-Si multijunction solar cells," in Proc. 37th IEEE Photovoltaic Spec. Conf., 2011, pp. 000784-000789.
8. R. L. Moon, L. W. James, H. A. Vander Plas, T. O. Yep, G. A. Antypas, and Y. Chai, "Multigap solar cell requirements and the performance of AlGaAs and Si cells in concentrated sunlight," in Proc. 13th IEEE Photovoltaic Spec. Conf., 1978, pp. 859-867. (Pubitemid 9409428)
9. J. Wang, D. Wheeler, Y. Yan, J. Zhao, S. Howard, and A. Seabaugh, "Silicon tunnel diodes formed by proximity rapid thermal diffusion," in Proc. IEEE Lester Eastman Conf. High Perform. Dev., 2002, pp. 393-401.
10. W. Zagozdzon-Wosik, P. B. Grabiec, and G. Lux, "Fabrication of submicron junctions-proximity rapid thermal diffusion of phosphorus, boron, and arsenic," IEEE Trans. Electron Devices, vol. 41, no. 12, pp. 2281-2290, Dec. 1994.
11. W. Guter and A. W. Bett, "IV-Characterization of Devices Consisting of Solar Cells and Tunnel Diodes," in Conf. Rec. IEEE 4th World Conf. Photovoltaic Energy Convers., 2006, vol. 1, pp. 749-752.