Resistive switching in organic memory device based on parylene-c with highly compatible process for high-density and low-cost memory applications

IEEE Transactions on Electron Devices

Volumn 59, Issue 12, 2012, Pages 3578-3582

  Huang, Ru ^a   Tang, Yu ^a   Kuang, Yongbian ^a   Ding, Wei ^b   Zhang, Lijie ^a   Wang, Yangyuan ^a  

^a PEKING UNIVERSITY   (China)

^b PRINCETON UNIVERSITY   (United States)

Author keywords

Organic memory; polychloro para xylylene (parylene C); polymer; resistive random access memory (RRAM); resistive switching

Indexed keywords

ACTIVE ELECTRODES; COMPATIBLE PROCESS; CROSSBAR ARRAYS; CYCLING ENDURANCE; INERT ELECTRODES; MEMORY APPLICATIONS; NON-VOLATILE MEMORY APPLICATION; ON/OFF CURRENT RATIO; ORGANIC MEMORIES; ORGANIC MEMORY DEVICES; PARYLENE C; PROCESS COMPATIBILITY; RESISTIVE MEMORIES; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS; SANDWICHED STRUCTURE; SWITCHING MECHANISM; SWITCHING VOLTAGES;

CARRIER TRANSPORT; ELECTRODES; PLATINUM; POLYMERS; SWITCHING SYSTEMS;

RANDOM ACCESS STORAGE;

EID: 84870372977     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2220142     Document Type: Article

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