Reliability studies of mo layer deposited on polyimide substrate for CIGS solar cell applications

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2012, Pages 891-894

  Perng, Dung Ching ^a   Hung, Ming Chen ^a   Wang, Kuo Yu ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

CIGS; flexible; photovoltaic cells; reliability

Indexed keywords

ANNEALING PROCESS; CIGS; CIGS FILMS; CIGS SOLAR CELLS; CRACKING RESISTANCE; FAILURE DIAMETERS; FLEXIBLE; FLEXIBLE SUBSTRATE; POLYIMIDE SUBSTRATE; PRECURSOR DEPOSITION; RAMPING RATE; SELENIZATION;

ANNEALING; CRACKS; DEPOSITS; PHOTOVOLTAIC CELLS; POLYIMIDES; RELIABILITY; SILVER;

SUBSTRATES;

EID: 84869457310     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2012.6317745     Document Type: Conference Paper

References (2)

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2. J.F. Fang, D.C. Perng, and J.W. Chen, Mechanism of forming (220/204)-oriented CuInSe2 film on Al: ZnO substrate using a two-step selenization process, J. Crystal Growth 321, 2011, pp. 106-112.