Intermediate band solar cells using in-plane ultrahigh-density InAs/GaAsSb quantum-dot sheets

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2012, Pages 45-47

  Eguchi, Y ^a   Shiokawa, M ^a   Sakamoto, K ^a   Yamaguchi, K ^a  

^a UNIVERSITY OF ELECTRO COMMUNICATIONS   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CELL PERFORMANCE; INAS; INTERMEDIATE-BAND SOLAR CELLS; LONG WAVELENGTH; P-LAYER; SEPARATION DISTANCES; ULTRAHIGH DENSITY; WAVELENGTH REGIONS;

INDIUM ARSENIDE; OPEN CIRCUIT VOLTAGE; QUANTUM EFFICIENCY;

SOLAR CELLS;

EID: 84869442879     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2012.6317565     Document Type: Conference Paper

References (5)

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4. th Int. Conf. on MBE, P1-35, (2010).
5. th IEEE-PVSC, A20-738 (2011).