|
Volumn , Issue , 2012, Pages 1698-1700
|
Epitaxial lift-off of GaAs thin-film solar cells followed by substrate reuse
a a a a |
Author keywords
gallium arsenide; photovoltaic cells; semiconductor growth; surface morphology; thin films; wafer bonding
|
Indexed keywords
COLD WELD;
CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY;
ENERGY DISPERSIVE SPECTROMETRY;
EPITAXIAL LIFTOFF;
GAAS;
GAAS SOLAR CELLS;
GAAS SUBSTRATES;
HIGH POWER CONVERSION;
LATTICE-MATCHED;
LIGHT WEIGHT;
MECHANICAL POLISHING;
P-N JUNCTION;
PHOTOLUMINESCENCE MEASUREMENTS;
PLASTIC FOIL SUBSTRATES;
PLASTIC SUBSTRATES;
POWER CONVERSION EFFICIENCIES;
PRECLEANING;
PRODUCTION COST;
PROTECTION LAYERS;
THIN-FILM GAAS SOLAR CELLS;
THIN-FILM SOLAR CELLS;
TRANSFER PROCESS;
WAFER SURFACE;
X-RAY PHOTOELECTRONS;
ATOMIC FORCE MICROSCOPY;
CHEMICAL BONDS;
CONVERSION EFFICIENCY;
EPITAXIAL FILMS;
EPITAXIAL GROWTH;
FILM GROWTH;
PHOTOVOLTAIC CELLS;
SEMICONDUCTING GALLIUM;
SEMICONDUCTOR GROWTH;
SEMICONDUCTOR JUNCTIONS;
SOLAR CELLS;
SPECTROMETRY;
SUBSTRATES;
SURFACE MORPHOLOGY;
THIN FILMS;
TRANSMISSION ELECTRON MICROSCOPY;
WAFER BONDING;
GALLIUM ARSENIDE;
|
EID: 84869387927
PISSN: 01608371
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/PVSC.2012.6317922 Document Type: Conference Paper |
Times cited : (14)
|
References (4)
|