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Volumn , Issue , 2012, Pages 2208-2212

Improved contact formation for large area solar cells using the alternative seed layer (ASL) process

Author keywords

annealing; contact; copper; electrochemical processes; metallization; nickel; silicon

Indexed keywords

CONTACT FORMATION; DIRECT CONTACT; ELECTROCHEMICAL PROCESS; GRID PATTERN; INDUSTRIAL SOLAR CELLS; LARGE-AREA SOLAR CELLS; NI PLATING; NICKEL SILICIDE; POLYCRYSTALLINE SILICON (POLY-SI); PROCESS FLOWS; SEED LAYER; SERIES RESISTANCES; SILICON SURFACES;

EID: 84869386903     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2012.6318035     Document Type: Conference Paper
Times cited : (7)

References (5)
  • 1
    • 84861046250 scopus 로고    scopus 로고
    • Formation of a low ohmic contact nickel silicide layer on textured silicon wafers using electroless nickel plating
    • th EPVSEC, 2010, pp. 2672-2675.
    • (2010) th EPVSEC , pp. 2672-2675
    • Nguyen, A.1
  • 2
    • 84870646019 scopus 로고    scopus 로고
    • Compatibility of the alternative seed layer (ASL) process with mono-si and poly-si substrates patterned by laser or wet etching
    • Seattle, USA
    • th PVSC, Seattle, USA, 2011
    • (2011) th PVSC
    • Michaelson, L.1
  • 4
    • 84861066071 scopus 로고    scopus 로고
    • Advances in electroless nickel plating for the metallization of silicon solar cells using different structuring techniques for the ARC
    • th EPVSEC, 2009, pp. 1414-1418
    • (2009) th EPVSEC , pp. 1414-1418
    • Aleman, M.1
  • 5
    • 84870628638 scopus 로고    scopus 로고
    • Technic Inc., http://www.technic.com


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.