Bias dependence of sub-bandgap light detection for core-shell silicon nanowires

Nano Letters

Volumn 12, Issue 11, 2012, Pages 5929-5935

  Zhou, Yuchun ^a   Liu, Yu Hsin ^b   Cheng, James ^a   Lo, Yu Hwa ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

nanophotonics; photodetection; Silicon nanowire; sub bandgap absorption

Indexed keywords

BIAS DEPENDENCE; BORON-DOPED SILICON; CARRIER TUNNELING; COMPATIBLE PROCESS; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; CONFINEMENT EFFECTS; CORE-SHELL; DEVICE CHARACTERISTICS; ENERGY BANDGAPS; FRANZ-KELDYSH EFFECT; INTRINSIC PROPERTY; K-SELECTION; LIGHT DETECTION; LOCALIZED IMPURITY; OPTICAL RADIATIONS; P-N JUNCTION; PHOSPHORUS DIFFUSION; PHOTO DETECTION; PHOTON ABSORPTIONS; PHOTORESPONSES; PHYSICAL MECHANISM; SI NANOWIRE; SILICON NANOWIRES; SINGLE CRYSTAL SILICON; SUBBAND GAP ABSORPTION; SURFACE AREA; VOLTAGE DEPENDENCE; WAVELENGTH REGIMES;

CRYSTAL IMPURITIES; DOPING (ADDITIVES); ENERGY GAP; NANOPHOTONICS; NANOWIRES; PHOSPHORUS; SEMICONDUCTOR JUNCTIONS; SHELLS (STRUCTURES);

SILICON;

EID: 84869200817     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl3033558     Document Type: Article

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