Time-of-flight range finding sensor using an integrated PNP PIN Phototransistor in 180 nm CMOS

IEEE International Conference on Group IV Photonics GFP

Volumn , Issue , 2012, Pages 258-260

  Davidovic, Milos ^a   Kostov, Plamen ^a   Hofbauer, Michael ^a   Gaberl, Wolfgang ^a   Zimmermann, Horst ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

depth sensor; distance measurement; Phototransistor; PIN; time of flight; TOF sensor

Indexed keywords

CMOS PROCESSS; DEPTH SENSORS; FILL FACTOR; OPTICAL POWER; PIN; STANDARD DEVIATION; TIME OF FLIGHT;

CMOS INTEGRATED CIRCUITS; DISTANCE MEASUREMENT; INTEGRATED OPTOELECTRONICS; PHOTONICS; PHOTOTRANSISTORS; STATISTICS;

SENSORS;

EID: 84869185987     PISSN: 19492081     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/GROUP4.2012.6324152     Document Type: Conference Paper

References (7)

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2. M. Davidovic, M. Hofbauer, H. Zimmermann, "High Dynamic Range Background Light Suppression for a TOF Distance Measurement Sensor in 180nm CMOS," IEEE Sensors Conf., 2011, pp. 359-362.
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6. P. Kostov, W. Gaberl, H. Zimmermann, "High-speed PIN PNP Phototransistors in a 0.18 um CMOS Process", IEEE ESSDERC, pp. 187-190, 2011.
7. P. Kostov, W. Gaberl, M. Hofbauer, H. Zimmermann, "PNP PIN Bipolar Phototransistors for High-Speed Applications Built in a 180 nm CMOS Process," J. Solid State Electronics, doi: 10.1016/j.sse.2012.04.011, 2012, in print.