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Japanese Journal of Applied Physics

Volumn 51, Issue 10 PART 2, 2012, Pages

Effect of Cu 2O doping in TiO 2 films on device performance of dye-sensitized solar cells

(7) Koo, Horng Show a Wang, Der Tsuey a Yu, Yi Kuei a Ho, Shao Hung a Jhang, Jia Yu a Chen, Mi a Tai, Ming Fong b

a MINGHSIN UNIVERSITY OF SCIENCE AND TECHNOLOGY (Taiwan)

b NATIONAL TSING HUA UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CELL PERFORMANCE; COPPER AND TITANIUM IONS; DEGRADATION MECHANISM; DEVICE PERFORMANCE; DYE-SENSITIZED SOLAR CELL; DYE-SENSITIZED SOLAR CELLS; FILL FACTOR; PHOTOANODE; PHOTOVOLTAIC CHARACTERISTICS; PHOTOVOLTAIC PARAMETERS; PHOTOVOLTAIC PERFORMANCE; RECOMBINATION CENTERS; REDUCTION-OXIDATION; TIO; VALENCE NUMBER; WEIGHT RATIOS;

CALCINATION; CONVERSION EFFICIENCY; DEGRADATION; OPEN CIRCUIT VOLTAGE; PHOTOELECTROCHEMICAL CELLS; PHOTOVOLTAIC EFFECTS; SEMICONDUCTOR DOPING; SOLAR CELLS; TITANIUM; TITANIUM DIOXIDE;

COPPER;

EID: 84869103672 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.51.10NE18 Document Type: Article

Times cited : (1)

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