Effect of nitrogen and carbon doping on electronic properties of SrTiO 3

Solid State Communications

Volumn 152, Issue 22, 2012, Pages 2063-2065

  Liu, H F ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

A. Semiconductors; B. Ab initio calculations; D. Electronic band structure

Indexed keywords

AB INITIO CALCULATIONS; BAND GAP NARROWING; CARBON DOPING; ELECTRONIC BAND STRUCTURE; N-DOPED; SRTIO; VALENCE-BAND MAXIMUMS; VISIBLE LIGHT;

CALCULATIONS; CARBON; DENSITY FUNCTIONAL THEORY; DIGITAL STORAGE; ELECTRONIC PROPERTIES; ENERGY GAP; SEMICONDUCTOR DOPING;

STRONTIUM TITANATES;

EID: 84869079643     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2012.08.027     Document Type: Article

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