Electronic and atomic structure of Ba 8Ga 16Ge 30-xSi x type i clathrates: Geand Ga XAFS study

Journal of Physics Condensed Matter

Volumn 24, Issue 48, 2012, Pages

  Mansour, A N ^a   Martin, J ^b   Wong Ng, W ^b   Nolas, G S ^c  

^a NAVAL SURFACE WARFARE CENTER   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^c UNIVERSITY OF SOUTH FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CLATHRATES; COMPUTATIONAL RESULTS; EXAFS; LOCAL COORDINATION; P CHARACTERS; PARTIAL DENSITIES; POWER FACTORS; RANDOM DISTRIBUTION; STRUCTURE PROPERTY RELATIONSHIPS; THERMOELECTRIC APPLICATION; UNOCCUPIED STATE; XAFS; XANES;

DENSITY FUNCTIONAL THEORY; ELECTRIC POWER FACTOR; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; GERMANIUM; HYDRATES; SILICON; X RAY ABSORPTION FINE STRUCTURE SPECTROSCOPY;

GALLIUM;

EID: 84869063090     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/24/48/485503     Document Type: Article

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