Fabrication of epitaxial zirconia and ceria thin films with arbitrary dopant and host atom composition

Thin Solid Films

Volumn 522, Issue , 2012, Pages 66-70

  Jiang, Jun ^a   Shen, Weida ^b   Hertz, Joshua L ^a,b  

^a DUPONT COMPANY   (United States)

^b UNIVERSITY OF DELAWARE   (United States)

Author keywords

Dopant concentration; Epitaxial growth; Gadolinium doped ceria; Magnetron sputtering; Yttria stabilized zirconia

Indexed keywords

A-CERAMICS; CERIA THIN FILMS; DEPOSITION TIME; DOPANT COMPOSITION; DOPANT CONCENTRATIONS; ELEMENTAL TARGETS; EPITAXIAL RELATIONSHIPS; EPITAXIALLY GROWN; FILM COMPOSITION; GADOLINIUM DOPED CERIA; HIGH PURITY; HOST ATOMS; ION MOTIONS; METAL ALLOYS; METAL TARGET; MGO SUBSTRATE; MULTI-LAYER THIN FILM; REACTIVE CO-SPUTTERING; SPUTTERING POWER; STRAIN EFFECT; SUBSTRATE TEMPERATURE; YSZ FILMS; YTTRIA-STABILIZED ZIRCONIA FILMS;

CERIUM; CERIUM COMPOUNDS; DEPOSITION; DOPING (ADDITIVES); EPITAXIAL FILMS; EPITAXIAL GROWTH; GADOLINIUM; MAGNETRON SPUTTERING; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; VAPOR DEPOSITION; X RAY DIFFRACTION; YTTRIA STABILIZED ZIRCONIA; ZIRCONIUM;

ZIRCONIA;

EID: 84868573425     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2012.09.013     Document Type: Conference Paper

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