First-principles study of point defects in solar cell semiconductor CuInS 2

Journal of Applied Physics

Volumn 112, Issue 8, 2012, Pages

  Chen, Hui ^a   Wang, Chong Yu ^a,b   Wang, Jian Tao ^c   Hu, Xiao Ping ^a   Zhou, Shao Xiong ^a  

^a CENTRAL IRON AND STEEL RESEARCH INSTITUTE   (China)

^b TSINGHUA UNIVERSITY   (China)

^c INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EXPERIMENTAL VALUES; FIRST-PRINCIPLES STUDY; FORMATION ENERGIES; HYBRID DENSITY FUNCTIONAL THEORY; INDIUM CONTENT; N-TYPE SEMICONDUCTORS; P TYPE SEMICONDUCTOR; TRANSITION LEVEL;

COPPER; DENSITY FUNCTIONAL THEORY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; INDIUM; POINT DEFECTS; SULFUR;

SEMICONDUCTING INDIUM;

EID: 84868356985     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4762001     Document Type: Article

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