On the interfacial electronic structure origin of efficiency enhancement in hematite photoanodes

Journal of Physical Chemistry C

Volumn 116, Issue 43, 2012, Pages 22780-22785

  Kronawitter, C X ^a,b   Zegkinoglou, I ^b,c   Rogero, C ^d   Guo, J H ^b   Mao, S S ^a,b   Himpsel, F J ^c   Vayssieres, L ^e  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c University of Wisconsin Madison   (United States)

^d CENTRO MIXTO CSIC UPV EHU   (Spain)

^e XI'AN JIAOTONG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION-BAND MINIMUM; CRYSTAL FIELDS; EFFICIENCY ENHANCEMENT; ELECTROCHEMICAL POTENTIAL; FLUORINE DOPED TIN OXIDE; HIGH-TEMPERATURE ANNEALING; HIGH-TEMPERATURE PROCESSING; INTERFACIAL COMPOSITION; INTERFACIAL ELECTRONIC STRUCTURE; INTERFACIAL INTERACTION; OXYGEN K-EDGE; PHOTO-ANODES; PHOTOCATALYTIC DEVICES; PHOTOELECTROCHEMICAL SYSTEM; SOFT X-RAY ABSORPTION SPECTROSCOPIES; UNOCCUPIED STATE;

DATA HANDLING; ELECTRONIC STRUCTURE; HEMATITE; NANOCOMPOSITES; OXYGEN; TIN; TIN OXIDES;

INTERFACE STATES;

EID: 84868113314     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp308918e     Document Type: Article

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