Germanium-tin + junction formed using phosphorus ion implant and 400 °c rapid thermal anneal

IEEE Electron Device Letters

Volumn 33, Issue 11, 2012, Pages 1529-1531

  Wang, Lanxiang ^a   Su, Shaojian ^b   Wang, Wei ^a   Yang, Yue ^a   Tong, Yi ^a   Liu, Bin ^a   Guo, Pengfei ^a   Gong, Xiao ^a   Zhang, Guangze ^b   Xue, Chunlai ^b   Cheng, Buwen ^b   Han, Genquan ^a   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Dopant activation; GeSn; n + junction

Indexed keywords

AL CONTACT; DIODE CURRENTS; DOPANT ACTIVATION; DOPANT CONCENTRATIONS; FORWARD BIAS; GESN; HIGH TEMPERATURE; ION IMPLANT; RAPID THERMAL ANNEAL; TUNNELING BARRIER;

DIODES; GERMANIUM; PHOSPHORUS; RAPID THERMAL ANNEALING; SEMICONDUCTOR DOPING;

TIN;

EID: 84867896093     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2212871     Document Type: Article

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