Three-dimensional multiphysics coupled field analysis of an integrated thermoelectric device

Numerical Heat Transfer; Part A: Applications

Volumn 62, Issue 12, 2012, Pages 933-947

  Reddy, B V K ^a   Barry, Matthew ^a   Li, John ^a   Chyu, Minking K ^a  

^a University of Pittsburgh   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACCURATE MODELING; BISMUTH-TELLURIDE; BULK CRYSTALLINE; CHANNEL WALL; COLD TEMPERATURES; CONDUCTING MATERIALS; COUPLED FIELD ANALYSIS; COUPLED FIELDS; DESIGN AND OPTIMIZATION; FLOW CHANNELS; HEAT INPUT; HIGHER T; HOT FLUID FLOW; HOT FLUIDS; INTERNAL RESISTANCE; LOAD RESISTANCES; MINIMAL EFFECTS; MULTI-PHYSICS; MULTIPHYSICS COUPLING; OPTIMUM LOADS; P-TYPE; POWER OUT PUT; SEEBECK VOLTAGE; SEMICONDUCTING MATERIALS; SEMICONDUCTOR PLATES; THERMOELECTRIC DEVICES; THERMOELECTRIC ELEMENT; THERMOELECTRIC PERFORMANCE; TOP SURFACE;

BISMUTH; CHANNEL FLOW; CONVERSION EFFICIENCY; FLOW RATE; SEMICONDUCTOR MATERIALS; THERMOELECTRICITY;

HEAT RESISTANCE;

EID: 84867821954     PISSN: 10407782     EISSN: 15210634     Source Type: Journal    
DOI: 10.1080/10407782.2012.715988     Document Type: Article

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