Progress and prospects of spin transfer torque random access memory

IEEE Transactions on Magnetics

Volumn 48, Issue 11, 2012, Pages 3025-3030

  Chen, E ^a   Apalkov, D ^a   Driskill Smith, A ^a   Khvalkovskiy, A ^a   Lottis, D ^a   Moon, K ^a   Nikitin, V ^a   Ong, A ^a   Tang, X ^a   Watts, S ^a   Kawakami, R ^a   Krounbi, M ^a   Wolf, S A ^b   Poon, S J ^b   Lu, J W ^b   Ghosh, A W ^b   Stan, M ^b   Butler, W ^c   Mewes, Tim ^c   Gupta, S ^c   Mewes, C K A ^c   Visscher, P B ^c   Lukaszew, R A ^d   more..

^a Grandis   (United States)

^b UNIVERSITY OF VIRGINIA   (United States)

^c UNIVERSITY OF ALABAMA   (United States)

^d The College of William and Mary   (United States)

Author keywords

Magnetic tunnel junction (MTJ); nonvolatile memory (NVM); spin transfer torque (STT); STT MRAM; STT RAM

Indexed keywords

MAGNETIC TUNNEL JUNCTION; NON-VOLATILE MEMORIES; SPIN TRANSFER TORQUE; STT-MRAM; STT-RAM;

MAGNETIC DEVICES; MRAM DEVICES;

RANDOM ACCESS STORAGE;

EID: 84867792491     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2012.2198451     Document Type: Article

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