Influence of vacuum annealing on structural, optical, electrical, and magnetic properties of Zn 0.94Co 0.05Al 0.01O diluted magnetic semiconductor thin films

IEEE Transactions on Magnetics

Volumn 48, Issue 11, 2012, Pages 3430-3433

  Lee, J C ^a   Lee, Y H ^b   Chiang, T H ^b   Su, C W ^c   Lee, J S ^d  

^a INSTITUTE OF PHYSICS   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c NATIONAL CHIAYI UNIVERSITY   (Taiwan)

^d NATIONAL PINGTUNG UNIVERSITY   (Taiwan)

Author keywords

(Co, Al) codoped ZnO; diluted magnetic semiconductor (DMS); RF magnetron co sputtering; room temperature ferromagnetism (RTFM); vacuum annealing

Indexed keywords

CO-DOPED ZNO; DILUTED MAGNETIC SEMICONDUCTORS; RF-MAGNETRON CO-SPUTTERING; ROOM TEMPERATURE FERROMAGNETISM; VACUUM-ANNEALING;

ALUMINUM; ANNEALING; CONDUCTIVE FILMS; ELECTRIC PROPERTIES; FERROMAGNETISM; MAGNETIC PROPERTIES; MAGNETIC SEMICONDUCTORS; METAL ANALYSIS; SATURATION MAGNETIZATION; TENSILE STRESS; THIN FILMS; VACUUM; ZINC; ZINC OXIDE; ZINC SULFIDE;

COBALT;

EID: 84867777480     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2012.2196264     Document Type: Article

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