Diffusion of Si and C atoms on and between graphene layers

Journal of Physics D: Applied Physics

Volumn 45, Issue 45, 2012, Pages

  Xian, Lede ^a   Chou, M Y ^a,b  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b INSTITUTE OF ATOMIC AND MOLECULAR SCIENCES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC TRANSPORT; C ATOMS; EPITAXIAL GRAPHENE; GRAPHENE LAYERS; GRAPHENE SHEETS; GROWTH MECHANISMS; GROWTH PROCESS; SI ATOMS; SINGLE LAYER;

ATOMS; DENSITY FUNCTIONAL THEORY; EPITAXIAL GROWTH; SILICON; SILICON CARBIDE;

GRAPHENE;

EID: 84867650942     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/45/45/455309     Document Type: Article

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