Preparing graphene with notched edges and nanopore defects by γ-ray etching of graphite oxide

Materials Letters

Volumn 89, Issue , 2012, Pages 226-228

  Zhang, Yaoyao ^a   Chen, Lei ^a   Xu, Zhiwei ^a   Li, Yinglin ^a   Zhou, Baoming ^a   Shan, Mingjing ^a   Wang, Zhen ^a   Guo, Qiwei ^a   Qian, Xiaoming ^a  

^a BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

Author keywords

ray irradiation; Defects; Graphene; Interfaces; Microstructure; Notched edges

Indexed keywords

ANNEALING EFFECTS; CONTACT AREAS; GRAPHITE OXIDE; GRAPHITIZATION DEGREE; NOTCHED EDGES; POLAR SOLVENTS; POLYMER CHAINS; RAMAN INVESTIGATIONS;

DEFECTS; ETCHING; GRAPHITE; INTERFACES (MATERIALS); IRRADIATION; MICROSTRUCTURE; MONOLAYERS; NANOPORES; NANOSTRUCTURES;

GRAPHENE;

EID: 84867546320     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2012.08.113     Document Type: Article

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