High-temperature magnetic insulating phase in ultrathin La 0.67Sr 0.33MnO 3 films

Physical Review Letters

Volumn 109, Issue 15, 2012, Pages

  Boschker, Hans ^a   Kautz, Jaap ^a   Houwman, Evert P ^a   Siemons, Wolter ^b   Blank, Dave H A ^a   Huijben, Mark ^a   Koster, Gertjan ^a   Vailionis, Arturas ^c   Rijnders, Guus ^a  

^a UNIVERSITY OF TWENTE   (Netherlands)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

^c STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIFERROMAGNETIC INSULATING PHASE; CRITICAL THICKNESS; ELECTRICAL CONDUCTIVITY; HIGH TEMPERATURE; INSULATING PHASE; OXYGEN OCTAHEDRA; ROOM TEMPERATURE; ROTATION PATTERN; SPIN-POLARIZED TUNNELING DEVICES; SRTIO; THICKNESS DEPENDENCE; TUNNELING BARRIER; ULTRA-THIN; UNIT CELLS;

ANTIFERROMAGNETISM; CURIE TEMPERATURE; ELECTRIC CONDUCTIVITY; INSULATION; MANGANESE; MANGANESE OXIDE; SATURATION MAGNETIZATION;

ULTRATHIN FILMS;

EID: 84867509182     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.109.157207     Document Type: Article

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