An investigation of the growth of bismuth whiskers and nanowires during physical vapour deposition

Journal of Physics D: Applied Physics

Volumn 45, Issue 43, 2012, Pages

  Stanley, S A ^a   Stuttle, C ^a   Caruana, A J ^a   Cropper, M D ^a   Walton, A S O ^b  

^a LOUGHBOROUGH UNIVERSITY   (United Kingdom)

^b UNIVERSITY OF LEEDS   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

[110] ORIENTATION; BISMUTH NANOWIRES; BISMUTH THIN FILMS; CRYSTALLITE ORIENTATION; DEPOSITION TEMPERATURES; FILM TEXTURES; GAAS SUBSTRATES; GROWTH MECHANISMS; HIGH QUALITY; OFF-NORMAL ANGLE; OHMIC BEHAVIOUR; OPTIMUM TEMPERATURE; PHYSICAL VAPOUR DEPOSITION; ROOM TEMPERATURE; SCANNING ELECTRON MICROGRAPHS; SPONTANEOUS GROWTH; TIP GROWTH; WHISKER GROWTH;

CRYSTALLITES; DEPOSITS; ELECTRIC PROPERTIES; GALLIUM ARSENIDE; NANOWIRES; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; THERMAL EVAPORATION; VAPORS; X RAY DIFFRACTION;

BISMUTH;

EID: 84867381562     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/45/43/435304     Document Type: Article

References (35)

1. See for example Galyon G T 2005 IEEE Trans. Electron. Packaging Manuf. 28 94-122 (Pubitemid 40794327)
2. Peach M O 1952 J. Appl. Phys. 23 1401
3. Frank F C 1953 Phil. Mag. 44 854-60
4. Eshelby J D 1953 Phys. Rev. 91 755
5. Koonce S E and Arnold S M 1953 J. Appl. Phys. 24 365
6. Lee B Z and Lee D N 1998 Acta Mater. 46 3701
7. Lin Y M, Sun X and Dresselhaus M S 2000 Phys. Rev. B 62 4610
8. Hicks L D and Dresselhaus M S 1993 Phys. Rev. B 47 12727
9. Gitsu D, Konopo L, Niklaeva A and Huber T E 2005 Appl. Phys. Lett. 86 102105 (Pubitemid 40597107)
10. Chiu P and Shih I 2004 Nanotechnology 15 1489
11. Heremans J, Thrush C M, Lin Y M, Cronin S, Zhang, Dresselhaus M S and Mansfield J F 2000 Phys. Rev. B 61 2921
12. Cronin S B, Lin Y M, Rabin O, Black M R, Dresselhaus G, Dresselhaus M S and Gai P L 2002 Microsc. Microanal. 8 58 (Pubitemid 35294024)
13. Cao S, Guo C, Wang Y, Miao J, Zhang Z and Liu Q 2009 Solid State Commun. 149 87
14. MeX package produced by Alicona Austria [http://www.alicona.com]
15. Kim D-H, Lee S-H, Kim J-K and Lee G-H 2006 Appl. Surf. Sci. 252 3525 (Pubitemid 43245647)
16. Wykoff R W G 1963 Crystal Structures vol 1
17. Latyshev Y I, Orlov A P, Nikitina A M, Monceau P and Klemm R A 2004 Phys. Rev. B 70 094517
18. Tian M, Wang J, Kumar N, Han T, Kobayashi Y, Liu Y, Mallouk T E and Chan M H W 2006 Nano Lett. 6 2773 (Pubitemid 46129570)
19. Salkovitz E I 1956 Trans. Am. Inst. Min. Metall. Eng. 206 176
20. Bacon D J, Hecksher F and Crocker A G 1964 Acta Crystallogr. 17 760
21. Panashchenko L and Osterman M 2009 Electronic Components and Technologies Conf. (ECTC) (San Diego, CA,) p 1037-43
22. Walton A S, Allen C S, Critchley K, Górzny M, McKendry J E, Brydson R M D, Hickey B J and Evans S D 2007 Nanotechnology 18 065204
23. Source: WebElements [http://www.webelements.com/]
24. Gallo C F, Chandrasekhar B S and Sutter P H 1963 J. Appl. Phys. 34 144
25. Lee S, Ham J, Jeon K, Noh J-S and Lee W 2010 Nanotechnology 21 405701
26. Mayer L, Rickett R and Stenemann H 1962 J. Appl. Phys. 33 982
27. Cheng YT, Weiner A M, Wong C A, Balogh M P and Lukitsch M J 2002 Appl. Phys. Lett. 81 3248 (Pubitemid 35360553)
28. Shim W, Ham J, Lee K, Jeung W Y, Johnson M and Lee W 2009 Nanoletters 9 18
29. Shim W, Ham J, Kim J and Lee W 2009 Appl. Phys. Lett. 95 232107
30. Wagner R S and Ellis W C 1964 Appl. Phys. Lett. 4 89
31. Hiruma K, Yazawa M, Katsuyama T, Ogawa K, Haraguchi K, Koguchi M and Kakibayashi H 1995 J. Appl. Phys. 77 447
32. Hsu -C-L, Chang S-J, Hung H-C, Lin Y-R, Huang C-J, Tseng Y-K and Chen I-C 2005 IEEE Trans. Nanotechnol. 4 649 (Pubitemid 41729623)
33. Yen M-Y, Chiu C-W, Hsia C-H, Chen F-R, Kai J-J, Lee C-Y and Chiu H-T 2003 Adv. Mater. 15 235
34. Hu J Q, Li Q, Wong N B, Lee C S and Lee S T 2002 Chem. Mater. 14 1216
35. Laudise R A and Ballman A A 1960 J. Phys. Chem. 64 688