Effect of Deposition Temperature on Dynamics and Mechanism of Deposition for Si-B-C Ceramic from BCl 3/SiCH 3Cl 3/H 2 Precursor

Journal of Materials Science and Technology

Volumn 28, Issue 9, 2012, Pages 793-798

  Zuo, Xinzhang ^a   Zhang, Litong ^a   Liu, Yongsheng ^a   Li, Siwei ^a   Cheng, Laifei ^a  

^a NORTHWESTERN POLYTECHNICAL UNIVERSITY   (China)

Author keywords

Chemical vapor deposition (CVD); Deposition mechanism; Morphology; Si B C ceramic

Indexed keywords

CHEMICAL COMPOSITIONS; CODEPOSITION; DENSE NETWORK STRUCTURES; DEPOSITION MECHANISM; DEPOSITION PROCESS; DEPOSITION TEMPERATURES; MORPHOLOGY CHANGES; ON DYNAMICS; SI-B-C CERAMIC;

ACTIVATION ENERGY; BORON; CERAMIC MATERIALS; DEPOSITION RATES; MORPHOLOGY; SILICON; SILICON CARBIDE;

CHEMICAL VAPOR DEPOSITION;

EID: 84867203891     PISSN: 10050302     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1005-0302(12)60132-7     Document Type: Article

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