Y 4 Si 2 O 7 N 2: A new oxynitride with low thermal conductivity

Journal of the American Ceramic Society

Volumn 95, Issue 10, 2012, Pages 3278-3284

  Wang, Jingyang ^a   Sun, Luchao ^a,b   Liu, Bin ^a   Wang, Jiemin ^a,b   Zhou, Yanchun ^c   Hu, Zijun ^c  

^a INSTITUTE OF METAL RESEARCH   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

^c AEROSPACE RESEARCH INSTITUTE OF MATERIALS AND PROCESSING TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EXPERIMENTAL MEASUREMENTS; FIRST-PRINCIPLES CALCULATION; HIGH TEMPERATURE; HIGH TEMPERATURE STABILITY; LATTICE THERMAL CONDUCTIVITY; LOW THERMAL CONDUCTIVITY; OXYNITRIDES; THEORETICAL MINIMUM; THEORETICAL PREDICTION; THEORETICAL RESULT; THERMAL BARRIER MATERIALS;

CALCULATIONS; ELASTICITY; NITRIDES; SILICON;

THERMAL CONDUCTIVITY;

EID: 84867103713     PISSN: 00027820     EISSN: 15512916     Source Type: Journal    
DOI: 10.1111/j.1551-2916.2012.05389.x     Document Type: Article

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