Leaky mode analysis of luminescent thin films: The case of ZnO on sapphire

Journal of Applied Physics

Volumn 112, Issue 6, 2012, Pages

  Aad, Roy ^a   Divay, Laurent ^a,c   Bruyant, Aurelien ^a   Blaize, Sylvain ^a   Couteau, Christophe ^a   Rogers, David J ^b   Lerondel, Gilles ^a  

^a UNIVERSITÉ DE TECHNOLOGIE DE TROYES   (France)

^b 8 Route de Chevreuse France   (France)

^c THALES RESEARCH AND TECHNOLOGY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE MATERIAL; ANALYSIS METHOD; C-SAPPHIRE; EMISSION ANISOTROPY; EMISSION PROPERTIES; EPITAXIAL THIN FILMS; GRAZING INCIDENCE ANGLE; LEAKY MODES; LUMINESCENT THIN FILMS; SOURCE TERMS; SPECTRAL FEATURE; SURFACE EMISSIONS; TRANSMISSION CALCULATIONS; ZINC OXIDE (ZNO); ZNO; ZNO THIN FILM;

ANISOTROPY; EMISSION SPECTROSCOPY; LUMINESCENCE; PHOTOLUMINESCENCE SPECTROSCOPY; POLARIZATION; PULSED LASER DEPOSITION; QUANTUM YIELD; REFRACTIVE INDEX; SAPPHIRE; SUBSTRATES; THIN FILMS;

ZINC OXIDE;

EID: 84867044636     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4752428     Document Type: Article

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