Defect specific photoconductance: Carrier recombination through surface and other extended crystal imperfections

Journal of Applied Physics

Volumn 112, Issue 6, 2012, Pages

  Kamieniecki, Emil ^a  

^a GEKA Associates   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER MODEL; CARRIER INJECTION; CARRIER RECOMBINATION; CRYSTAL IMPERFECTIONS; DEFECTS AND IMPURITIES; DIFFUSION MODEL; ELECTRICAL CHARACTERIZATION; ELECTRONIC GRADE; ELECTROSTATIC POTENTIALS; EXPONENTIAL DECAYS; EXTENDED DEFECT; HIGH BRIGHTNESS; LIGHT INTENSITY; LINEAR DEPENDENCE; LOGARITHMIC DECAY; LOGARITHMIC DEPENDENCE; PHOTOCONDUCTANCE; PHOTOVOLTAIC; RECOMBINATION MODEL; SURFACE CHARACTERISTICS; SURFACE RECOMBINATION VELOCITIES; TIME DEPENDENCE; UNIFIED APPROACH; WAFER STRUCTURE;

CRYSTAL IMPURITIES; DISLOCATIONS (CRYSTALS); GRAIN BOUNDARIES; LIGHT EMITTING DIODES; POINT DEFECTS; SILICON WAFERS;

SURFACE DEFECTS;

EID: 84867036480     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4754835     Document Type: Article

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