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Volumn , Issue , 2011, Pages 124-127

Electro-thermal instability in multi-cellular Trench-IGBTs in avalanche condition: Experiments and simulations

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE BEHAVIOR; CURRENT DISTRIBUTION; ELECTRO-THERMAL SIMULATION; ELEMENTARY CELLS; UNCLAMPED INDUCTIVE SWITCHING;

EID: 84866736176     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISPSD.2011.5890806     Document Type: Conference Paper
Times cited : (42)

References (8)
  • 2
    • 0033877923 scopus 로고    scopus 로고
    • Failure dynamics of the IGBT during turn-off for unclamped inductive loading conditions
    • C.-C. Shen et al., "Failure Dynamics of the IGBT During Turn-off for Unclamped Inductive Loading Conditions," IEEE Transactions on Industry Applications, vol. 36, pp. 614-624, 2000.
    • (2000) IEEE Transactions on Industry Applications , vol.36 , pp. 614-624
    • Shen, C.-C.1
  • 3
    • 36048981887 scopus 로고    scopus 로고
    • An equivalent-time temperature mapping system with a 320 256 pixels full-frame 100 khz sampling rate
    • 106
    • M. Riccio et al., "An equivalent-time temperature mapping system with a 320 256 pixels full-frame 100 khz sampling rate," Review of Scientific Instruments, vol. 78, pp. 106 106-3 pages, 2007.
    • (2007) Review of Scientific Instruments , vol.78 , pp. 106-3
    • Riccio, M.1
  • 4
    • 34548689885 scopus 로고    scopus 로고
    • New developments of THERMOS3, a tool for 3D electro-thermal simulation of smart power MOSFETs
    • A. Irace, G. Breglio, and P. Spirito, "New developments of THERMOS3, a tool for 3D electro-thermal simulation of smart power MOSFETs," Microelectronics Reliability, vol. 47, pp. 1696-1700, 2007.
    • (2007) Microelectronics Reliability , vol.47 , pp. 1696-1700
    • Irace, A.1    Breglio, G.2    Spirito, P.3
  • 5
    • 0025511147 scopus 로고
    • Analytical modeling of device-circuit interactions for the power Insulated Gate Bipolar Transistor (IGBT)
    • A. R. Hefner, "Analytical modeling of device-circuit interactions for the power Insulated Gate Bipolar Transistor (IGBT)," IEEE Transaction on Industry Applications, vol. 26, pp. 995-1005, 1990.
    • (1990) IEEE Transaction on Industry Applications , vol.26 , pp. 995-1005
    • Hefner, A.R.1
  • 8
    • 0015387775 scopus 로고
    • An analytical expression for the multiplication factor m in semiconductors with equal ionization coefficients
    • P. Spirito, "An Analytical Expression for the Multiplication Factor M in Semiconductors with Equal Ionization Coefficients," IEEE Transactions on Electron Devices, vol. 8, pp. 951-953, 1972.
    • (1972) IEEE Transactions on Electron Devices , vol.8 , pp. 951-953
    • Spirito, P.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.