Building the electrical model of the Photoelectric Laser Stimulation of a PMOS transistor in 90 nm technology

Microelectronics Reliability

Volumn 52, Issue 9-10, 2012, Pages 2035-2038

  Sarafianos, A ^a,b   Llido, R ^a,c   Dutertre, J M ^b   Gagliano, O ^a   Serradeil, V ^a   Lisart, M ^a   Goubier, V ^a   Tria, A ^b   Pouget, V ^c   Lewis, D ^c  

^a STMICROELECTRONICS   (France)

^b Center Microelectronics De Provence Georges Charpak   (France)

^c UNIVERSITÉ DE BORDEAUX   (France)

Author keywords

[No Author keywords available]

Indexed keywords

1064 NM; 90 NM TECHNOLOGY; COMPARISON WITH EXPERIMENTS; ELECTRICAL MODELS; LASER STIMULATION; PMOS TRANSISTORS; SPOT SIZES; TEST STRUCTURE;

CONTINUOUS WAVE LASERS; MAPS; PHOTOELECTRICITY;

NANOTECHNOLOGY;

EID: 84866728694     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2012.06.047     Document Type: Article

References (5)

1. ELDO user's manual - software version 6.6-1. Release 2005.3 - Mentor Graphics user's manual; 2005.
2. Inverted Emission Microscope iPHEMOS Series Hamamatsu, «commercial brochure»; 2011.
3. Sanchez K, Deplats R, Beaudoin F, Perdu P, Lewis D, Vedagarbha P, et al. Delay variation mapping induced by dynamic laser stimulation. In: Proceedings of 43rd IEEE international reliability physics symposium (IRPS); 2005. p. 305-11.
4. Glowacki A. Expanding the scope of laser stimulation techniques for functional analysis and reliability of semiconductor devices by in-depth investigation of the optical interaction with the devices. PhD thesis. Berlin University of Technology; 2010.
5. Llido R, Gomez J, Goubier V, Haller G, Pouget V, Lewis D. Improving defect localization techniques with laser beam with specific analysis and set-up modules. In: Proceedings of IEEE international reliability physics symposium (IRPS), in press.