High efficiency Ka-band power amplifier MMICs fabricated with a 0.15μm GaN on SiC HEMT process

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2012, Pages

  Campbell, Charles F ^a   Kao, Ming Yih ^a   Nayak, Sabyasachi ^a  

^a TRIQUINT SEMICONDUCTOR   (United States)

Author keywords

Gallium Nitride; Millimeter wave; MMIC; Power amplifiers

Indexed keywords

CONTINUOUS WAVES; DIE SIZE; GAN HEMTS; KA BAND; KA-BAND POWER AMPLIFIER; OUTPUT POWER; PROCESS TECHNOLOGIES; SINGLE-ENDED;

EFFICIENCY; MILLIMETER WAVES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; POWER AMPLIFIERS; SILICON CARBIDE;

GALLIUM NITRIDE;

EID: 84866643217     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2012.6259444     Document Type: Conference Paper

References (8)

1. TGA2575 Ka-Band 4 Watt Power Amplifier, TriQuint Semiconductor Datasheet, www.TriQuint.com.
2. TGA4916 7 Watt Ka-Band HPA, TriQuint Semiconductor Datasheet, www.TriQuint.com.
3. F. Colomb et al., "2 and 4 watt Ka-band GaAs PHEMT power amplifier MMICs," 2003 IEEE Int. Microwave Symp. Dig., pp. 843-846.
4. C. F. Campbell et al., "High Efficiency Ka-band Power Amplifier MMIC Utilizing a High Voltage Dual Field Plate GaAs PHEMT Process," 2011 Compound Semiconductor IC Symp. Dig., pp.41-44.
5. S. J. Mahon et al., "A family of 1, 2 and 4-watt power amplifier MMICs for cost effective VSAT ground terminals," 2005 Compound Semiconductor IC Symp. Dig., pp. 224-227.
6. A. Darwish et al., "AlGaN/GaN Ka-Band 5-W MMIC Amplifier," IEEE Trans. Microwave Theory & Tech., vol. 54, no. 12, pp. 4456-4463, December 2006.
7. K. S. Boutros et al., "5W GaN MMIC for Millimeter-Wave Applications," 2006 Compound Semiconductor IC Symp. Dig., pp. 93-95.
8. M. Micovic et al., "GaN MMIC Technology for Microwave and Millimeter-wave Applications,"2005Compound Semiconductor IC Symp. Dig., pp. 173-176.